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628
Study of the Infrared Absorption Characteristics of the AlGaN/GaN Super-lattices终稿

Yue Zhang*, Wei Zhang, Ling Lv

全体主题 > Compound Semiconductor Devices

613
Effects of Coulomb and Roughness Scattterings on 4H-SiC MOSFET终稿

Yaliang Zheng, W.M. Tang, Wai Tien Chan, Wing Kit Cheung, Ho Nam Lee, Tony Chau, P.T. Lai*

全体主题 > Compound Semiconductor Devices

599
Adsorption Characteristics Composition of Ge and Si on 4H-SiC(0001) Surface全文被拒

xiaomin he*, Yi Liang, Teng Jia

全体主题 > Compound Semiconductor Devices

593
Neutron-Irradiation Effects on ZnO Nanostructure终稿

Xiaolong Zhao, Yongning He*, Liang Chen

全体主题 > Compound Semiconductor Devices

583
Influence of p- blocking base carrier lifetime on characteristics of SiC light-triggered thyristor终稿

Liqi An, Hongbin Pu*, Xi Wang, Xinyu Tang, Qing Liu

全体主题 > Compound Semiconductor Devices

542
Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs终稿

Wei-Chih Cheng, Tao Fang, Siqi Lei, Yunlong Zhao, Minghao He, Mansun Chan, Guangrui(Maggie) Xia, Feng Zhao, Hongyu Yu*

全体主题 > Compound Semiconductor Devices

504
Mechanism of Buffer-Related Current Collapse in AlGaN/GaN HEMT终稿

Zhongxiao Huang*, Jing Liu

全体主题 > Compound Semiconductor Devices

482
Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs终稿

Shiwei Liang, Zhiqiang Li, Kun Zhou, Linfeng Deng, Juntao Li, Jun Wang*

全体主题 > Compound Semiconductor Devices

476
A novel high power 4H-SiC unipolar diode with advanced performance终稿

Hongbin Pu*, Xi Wang, Liqi An

全体主题 > Compound Semiconductor Devices

462
1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region终稿

Weijiang Ni*, Miaoling Xu, Tobias Erlbacher, Holger Schlichting, Xiaoliang Wang, Hongling Xiao, Mingshan Li

全体主题 > Compound Semiconductor Devices

455
Effects of Annealing Temperatures on the Electrochemical Properties of Silicon Carbide Anode Film for Lithium Ion Battery终稿

Zhang Fei, Huang XiaoDong*, Cao YuanZhi, Li Fan, He XinYi, Shi JingJing, Huang QingAn

全体主题 > Compound Semiconductor Devices

435
A GaN-based Reverse-Blocking MISHEMT with Schottky-MIS hybrid Drain and a Thin Upward Graded AlGaN Barrier Layer终稿

Wu Shan, 宜军 施*, liu xiyuan, Chen Wanjun, Chen Tangsheng

全体主题 > Compound Semiconductor Devices

426
Thermal Analysis of GaN Schottky Diodes in the Terahertz Frequency Multipliers终稿

Xubo Song*

全体主题 > Compound Semiconductor Devices

419
Thin-barrier InAlN/GaN MISHEMTs using LPCVD Si3N4 as gate dielectric终稿

Xingye Zhou*

全体主题 > Compound Semiconductor Devices

418
Monolithically Integrated E/D InAlN/GaN HEMT And Inverters On Sapphire Substrate终稿

Gu Guodong, Dun Shaobo, Lv Yuanjie, Feng Zhihong*, Zhang Zhirong, Guo Hongyu

全体主题 > Compound Semiconductor Devices

重要日期

  • 会议日期

    06月12日

    2019

    至

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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Xi'an University of Technology
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