528 / 2019-03-08 21:32:31

Modeling of a new structure of IGBT module

New structure of IGBT module;Modeling;Parasitic parameters;Thermal resistance

全体主题 > Power Electronics

Abstract—Based on the new structure of IGBT module of an internal integrated shunt designed by the team, it is optimized, modeled and simulated, the parasitic parameters are reduced, and the thermal resistance value of the module is calculated, and a general new structure model of IGBT module is obtained by experimental verification.