The fourth joint EUROSOI-ULIS event will be hosted by the University of Granada in Granada, Spain. The focus of the sessions is on advanced nanoscale devices, including SOI technology. Papers in the following areas are solicited: Physical mechanisms and innovative SOI-like devices. New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials. Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications. New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.
The organizing committee invites scientists and engineers working in the above fields to actively participate by submitting high quality papers. Original 2-page abstracts with illustrations will be accepted for review in pdf format. The accepted abstracts will be published in a Proceedings book with an ISBN. A 4-page follow-up paper, delivered before February 23, 2018 will be reviewed and published at the IEEE Xplore Digital Library. The authors of the best papers will be invited to submit a longer version for publication in a special issue of Solid-State Electronics. A best paper award will be attributed to the best paper by the SINANO institute.
Papers in the following areas are solicited:
03月19日
2018
03月21日
2018
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