369 / 2018-03-29 15:52:23
Impact of Parasitic Elements on Power Loss in GaN- based Low-voltage and High-current DC-DC Buck Converter
parasitic elements; power loss; GaN-based; buck converter
终稿
Parasitic elements have significant impacts on the power loss of GaN-based DC-DC converter. And this situation will be more severe for a converter with low output-voltage and high output-current. This work mainly investigates the impacts of the parasitic elements on power loss in GaN-based low-voltage and high-current buck converter. The parasitic inductance in source terminal of high-side transistor has a relative larger impact on the power loss. However, the power loss induced by the parasitic resistance in low-side transistor takes a large proportion. Furthermore, the presence of parasitic inductance in the return of afterflow may degrade the freewheeling capacity of the anti-parallel diode, or even makes the diode completely ineffective. As a result, the printed circuit board (PCB) with four thickening copper layers and an optimum PCB layout are implemented to minimize the impacts of parasitic elements. The experiment results show that a 12/1.2 volts (output current from 8 amperes to 12 amperes) GaN-based converter with high-efficiency of over 90% is achieved, which delivering an improvement in efficiency of 5% at output current of 15 ampere compared to the previous non-optimization results.
重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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