221 / 2017-11-21 17:01:24
The Security Protection of SiC MOSFET NPC Tri-level Converter
SiC MOSFET,NPC three-level converter,voltage balanced,leakage current,overcurrent,same arm,clamping diode,asymmetric capacitor
终稿
Wenxuan Wang / Xi'an University of Technology
Dongjie Cui / Xi'an University of Technology
Wenjun Wu / Xi'an University of Technology
Yuxi Cai / Xi'an University of Technology
In this paper, the security strategies of Silicon Carbide (SiC) MOSFET neutral point clamped (NPC) tri-level converter were discussed. Firstly, SiC MOSFET driver was designed, in which over-current protection strategy based on drain-source voltage detection was suggested. Secondly, the origin about voltage unbalance between the same arm SiC MOSFET in tri-level converter was analyzed in detail during commutation process. A novel voltage balanced circuit was proposed. The research results showed that the leakage current of clamped diode was the dominant factor, which determined SiC MOSFET voltage unbalance degree. The greater the leakage current of clamped diode was, the more obvious the voltage unbalance in same arm SiC MOSFET. The tri-level converter experiments were carried, in which different types of clamped diode and proposed voltage balanced circuit were adopted. They verified that the voltage unbalance analyses and the proposed strategy were correct and effective.
重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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