活动简介

The 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place at the Royton Sapporo, Sapporo, Japan May 28–June 1, 2017, including short course on May 28. ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications. Following every year’s successful conference in each nominated global region, our conference returns to Japan.
ISPSD 2017 will be held in the beautiful city of Sapporo at the center of the island of Hokkaido. Hokkaido is the northernmost prefecture of Japan and is famous for its beautiful nature, delicious foods, and hot springs. Such a beautiful environment will foster active discussion at the conference.

征稿信息

重要日期

2016-11-24
摘要截稿日期
2017-03-31
终稿截稿日期

征稿范围

MAIN CATEGORIES OF INSTEREST INCLUDE:

  • High voltage devices (HV)

  • Low voltage devices and power IC device technology (LVT)

  • Power IC design (ICD)

  • GaN and nitride base compound materials (GaN)

  • SiC and other materials (SiC)

  • Module and Package Technologies (PK)

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重要日期
  • 会议日期

    05月28日

    2017

    06月01日

    2017

  • 11月24日 2016

    摘要截稿日期

  • 03月31日 2017

    终稿截稿日期

  • 06月01日 2017

    注册截止日期

主办单位
The IEEE Electron Devices Society
The IEEE Power Electronics Society
New Generation Power Electronics and System Research Consortium of Japan
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