摘要详情

ID / 提交时间

1 / 2016-04-04 05:48:42

标题

Growing zirconium carbide (ZrC) layers by CVD at Temperature between 1200 and 1500℃ and calculate deposition rate

关键字

9684,9685,9686,9834

主题及专题

全体主题

状态

摘要录用

作者

Bilal Abbas Alawad / University of Pretoria

saphina SB / University of Pretoria

Hertzog HB / (Applied Chemistry Division,South Africa Nuclear Energy (NECSA),Pretoria 0001 South Africa )

Johann JN / (Applied Chemistry Division,South Africa Nuclear Energy (NECSA),Pretoria 0001 South Africa )

Thulani TH / (Department of physics ,university of pretoria ,0002 South Africa )

Johan JM / (Department of physics ,university of pretoria ,0002 South Africa )

Philip PC / (Department of Chemical Engineering ,university of pretoria,0002 South Africa )

摘要

Zirconium carbide (ZrC) layers were grown on graphite substrate by chemical vapor deposition (CVD) using zirconium tetrachloride (ZrCl4) and methane (CH4), hydrogen (H2) and argon (Ar) as precursors. The layers were deposited at 1200, and 1500 ℃ in atmosphere pressure.The growth rate of ZrC layers as a function of temperature was investigated. The morphology of ZrC layers on graphite substrates were observed by scanning electron microscopy (SEM) and (EDS). The thickness of the layers was directly measured by SEM. The phases of the layers were characterized by X-ray diffraction (XRD). The results indicated that the deposition of ZrC was dominated by gas nucleation. The deposition morphologies and the deposition rates were studied at different temperatures to understand the deposition mechanisms.