Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors
编号:111 访问权限:仅限参会人 更新:2021-07-21 20:06:16 浏览:329次 口头报告

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摘要
Copper-foiled inductors are widely used in high-power applications. It is known that the parasitic capacitance in the inductor limits the best performance of wide-band-gap devices. Especially in copper-foiled medium-voltage inductors, the parasitic capacitance is larger due to the extensive interleaving area, extra insulation, and a larger number of turns. This digest is aimed at investigating the impacts of power level on parasitic capacitance in copper-foiled medium voltage inductors, where the power is scaled from 50 kW to 2 MW. Three different scaling laws will be discussed in the digest, which can provide design guidelines for future high-power copper-foiled inductors.
 
关键词
Parasitic capacitance,copper foil,inductor,power level
报告人
Hongbo Zhao
Aalborg University

稿件作者
Hongbo Zhao Aalborg University
Rui Wang Department of Energy Technology; Aalborg University
Dipen Dalal Aalborg University
Christian Lascu Aalborg University
Christian Uhrenfeldt Aalborg University
Bjørn Rannestad KK wind solution
Stig Munk-Nielsen Aalborg University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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