Distance-Uncertainty Weighted Active Learning Kriging for Plasma Etching Modeling
编号:120 访问权限:仅限参会人 更新:2026-10-10 20:28:28 浏览:31次 张贴报告

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摘要
Plasma etching experiments are costly, making the rapid development of reliable process surrogate models with limited samples essential for improving process development efficiency. Conventional uncertainty sampling primarily focuses on regions where the model has limited knowledge, but it may repeatedly select nearby candidate points in small-sample settings, resulting in redundant information. Conversely, sampling based solely on spatial distribution cannot effectively refine regions with complex response behavior. To address these limitations, this paper proposes a Distance-Uncertainty Weighted Active Learning Kriging (DUW-ALK) method. The proposed method employs an Automatic Relevance Determination (ARD) Matérn-5/2 Kriging model as the probabilistic surrogate. It integrates epistemic uncertainty, characterized by the predictive standard deviation, with the spatial novelty of candidate points relative to the training set through normalization and dynamically adjusts their relative contributions to balance design space coverage and local refinement. Comparative results on two-dimensional computational fluid dynamics (CFD) simulation data and four-dimensional experimental deep reactive ion etching (DRIE) data demonstrate that spatial distance information reduces redundant local queries, while posterior uncertainty helps identify response regions requiring additional samples. The synergy between these two signals enables DUW-ALK to achieve improved sample efficiency throughout the learning process and higher predictive accuracy across different data structures. The proposed method provides a simple and readily implementable approach to sequential experimental design for high-cost processes with limited sample availability.
关键词
active learning,kriging model,plasma etching,small-sample modeling
报告人
Di Zhao
Ph.D. Student Xi’an Jiaotong University

稿件作者
Di Zhao Xi’an Jiaotong University
Zihao Lei Xi'an Jiaotong University
Guangrui Wen Xi'an Jiaotong University
Rui Feng East China Institute of Photo-Electron IC
Zhiqi Gu East China Institute of Photo-Electron IC
Fan Wang East China Institute of Photo-Electron IC
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重要日期
  • 会议日期

    11月06日

    2026

    至

    11月08日

    2026

  • 10月15日 2026

    初稿截稿日期

主办单位
IEEE Instrumentation and Measurement Society
承办单位
Sichuan University
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