IGBT devices are widely used in high-voltage and high-power applications. IGBT module has two kinds of packaging structure, which are welded IGBT and press-pack IGBT (PP-IGBT). Since a PP-IGBT module can integrate more chips and diode chips to obtain a large current capacity, it has been widely used in high power applications. However, due to the individual differences of chips in parallel, the stray parameters of the gating loops may be different, which leads to the imbalance of current and thermal problem of PP-IGBT, and eventually lead to the failure or even damage of the device. In this paper, some key factors resulting inconsistency of stray parameters in gating loops are reviewed, and a methodology to make the gating loops more consistent are proposed. The feasibility of the methodology is also verified by ANSYS software simulation.

Driving loop layout, PP-IGBT, Stray parameter.