A Hybrid Si/GaN 5-Level Flying Capacitor Single-phase Inverter and its Current Ripple Analysis
编号:51 访问权限:仅限参会人 更新:2020-10-15 15:35:19 浏览:288次 口头报告

报告开始:2020年11月02日 15:00(Asia/Shanghai)

报告时间:15min

所在会场:[B] Power Electronics Technology and Application [B1] Session 3 and Session 8

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摘要
The GaN flying capacitor multilevel converter (FCMC) offers a better harmonic spectrum and attains higher voltages with a limited maximum device rating but suffers from high components quantity and cost. In this paper, a Si/GaN hybrid single-phase 5-level flying capacitor multilevel inverter (FCMI) is proposed with a much-reduced component quantity and cost. The proposed hybrid FCMI consists of only two pairs of GaN devices and a pair of line-frequency Si devices, compared with four-pairs eight high-frequency GaN devices in a conventional five-level FCMI. Furthermore, the proposed FCMI has a twice effective voltage. The operation principle and modulated strategy are detailed discussed. Meanwhile, a new current ripple model is introduced to investigate the output performance. A 600V, 5-level hybrid Si/GaN converter prototype is designed and built. The experimental results confirm the validity and effectiveness of the presented converter and current ripple model.
 
关键词
GaN,Current ripple,flying capacitor,multilevel converter
报告人
Kun Qu
Hunan University

Bo Hu
Hunan University

稿件作者
Kun Qu Hunan University
Chao Zhang Hunan University
Weibin Chen Hunan University
Bo Hu Hunan University
Xin Yin Hunan University
Jun Wang Hunan University
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重要日期
  • 会议日期

    11月02日

    2020

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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