Comparative Analysis of CM EMI for Boost Converter Using Si/SiC hybrid switch
编号:28 访问权限:仅限参会人 更新:2020-10-15 14:16:03 浏览:241次 口头报告

报告开始:2020年11月02日 15:15(Asia/Shanghai)

报告时间:15min

所在会场:[B] Power Electronics Technology and Application [B1] Session 3 and Session 8

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摘要
    The combination of the Si IGBT and SiC MOSFET inside the Si/SiC hybrid switch will bring serious conducted electromagnetic interference (EMI) noise in the application of the power converters. Compared with the differential mode (DM) EMI noise, the common mode (CM) EMI noise has a greater impact on the total conducted EMI noise, and it is relatively difficult to suppress the common mode EMI noise. However, there is still lack of research on the CM EMI emission characteristics of Si/SiC hybrid switch based converters. In this paper, the CM EMI noise caused by the Si/SiC hybrid switch, Si IGBT, and SiC MOSFET are compared at first. Then, the influence of different current ratios of the Si/SiC hybrid switch on the CM EMI is analyzed
关键词
Si/SiC hybrid switch, CM, EMI
报告人
Bo Hu
College of Electrical and Information Engineering; Hunan University

稿件作者
Bo Hu College of Electrical and Information Engineering; Hunan University
Zishun Peng Hunan University
Pei Xiao Hunan University
Yuxing Dai Wenzhou University
Chao Zhang College of Electrical and Information Engineering; Hunan University
Jun Wang Hunan University
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重要日期
  • 会议日期

    11月02日

    2020

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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