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Analysis of the Flying-Capacitor Modular Multilevel Converter Based on SiC MOSFET
编号：192 访问权限：公开 更新：2020-10-15 20:11:50 浏览：243次 张贴报告

报告开始：2020年11月04日 15:05（Asia/Shanghai）

报告时间：5min

所在会场：[G] Poster session [G2] Poster Session 2 and Poster Session 7

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摘要
   Reducing the capacitor voltage ripple amplitude of the modular multilevel converter (MMC) submodule is expected to reduce the capacitance of the module capacitors, which is very important for the increase of the power density. In the method of reducing capacitor voltage fluctuations of MMC submodule, flying-capacitor modular multilevel converter (FC-MMC) is widely regarded for its good performance. It is characterized by the connection of upper and lower arm middle taps through a flying capacitor in per phase arm. However, the reduction of the capacitance of flying capacitor requires an increase in switching frequency, which means high switching loss for the converter. Therefore, SiC MOSFET has a good application prospect in FC-MMC due to its low switching loss. This paper mainly compares the capacitor voltage fluctuation between FC-MMC and MMC, and the advantages of SiC MOSFET in FC-MMC applications.
关键词
Modular multilevel converter, Submodule capacitor voltage ripple suppression, Flying-Capacitor modular multilevel converter, SiC MOSFET
报告人
Kaiyuan Jing
The School of Electrical and Electronic Engineering,Huazhong University of Science and Technology, Wuhan 430074, China.

稿件作者
Kaiyuan Jing The School of Electrical and Electronic Engineering,Huazhong University of Science and Technology, Wuhan 430074, China.
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重要日期

  • 会议日期

    11月02日

    2020

    至

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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