This paper proposes a datasheet-based loss model and efficiency analysis of the SiC power devices based on three-phase three-level Vienna rectifier. Detailed power loss model for the semiconductor devices in the Vienna rectifier using carrier-based PWM (CB-PWM) modulation is presented. The power loss distribution over the semiconductor devices is compared among four different SiC MOSFETs and the optimal semiconductor is selected. Based on the calculated power loss, the thermal design is done and a maximum temperature rise of 69.29℃ in power devices is observed according to the simulation result. Finally an air-forced cooled, 100kHz, 55kW Vienna rectifier is demonstrated and the semiconductor efficiency achieves 98.6%.

Vienna rectifier, SiC semiconductor power devices, switching loss, power loss, thermal design