A CM EMI Suppression Strategy for the Single-inverter based on the Si/SiC Hybrid Switch
编号:148 访问权限:仅限参会人 更新:2020-10-15 19:59:19 浏览:253次 口头报告

报告开始:2020年11月02日 14:45(Asia/Shanghai)

报告时间:15min

所在会场:[B] Power Electronics Technology and Application [B1] Session 3 and Session 8

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摘要
Numerous studies have shown that the Si IGBT/SiC MOSFET hybrid switch has been verified to be a high-efficiency and cost-effective device for the application of the inverter. In fact, the high switching frequency of the SiC MOSFET means high dv/dt, which will generate severe common-mode electromagnetic interference (CM EMI). Meanwhile, it would lead to some malfunction of the power converter. In order to suppress the CM EMI of the single-phase inverter based on the Si/SiC hybrid switch, a CM EMI suppression strategy combining the variable switching patterns and the variable switching frequency will be proposed. Furthermore, the feasibility of the proposed method has been verified by experimental results distinctly.
 
关键词
CM EMI,inverter,Si/SiC hybrid switch,single-phase,suppression strategy
报告人
Shuaige Zhu
Hunan University

稿件作者
Shuaige Zhu Hunan University
Zishun Peng Hunan University
Ling Ou Hunan University
Haiyan Zhu Hunan University
Qihui Fu Hunan University
Pei Xiao Hunan University
Yuxing Dai Wenzhou University
Jun Wang Hunan University
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重要日期
  • 会议日期

    11月02日

    2020

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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