Liu rui / College of communication and electronic engineering, Qiqihar University
As with common reference sources, this article first designed two circuits to generate positive and negative temperature coefficient voltage circuits, and then combined the two voltages. The difference is that an extra temperature compensation voltage is introduced on this basis. The temperature compensation circuit is composed of a MOSFET working in a sub-threshold region, which greatly reduces the temperature coefficient. Add over-voltage protection (OVP) circuit to prevent high voltage from damaging the voltage source. This design based on SMIC 0.18µm process, the simulation results show that: under the working voltage of 5V, the output voltage is 1.26V. Under the change of 0℃ to 145℃ the temperature coefficient is 5.3ppm/℃. The power supply voltage rejection ratio (PSRR) is -76dB at low frequency. The final layout area of the bandgap voltage reference (BGR) is 81.57μm × 132.51μm.