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150 / 2021-04-18 14:24:57
Effect of source/ drain electrode fabrication technology on the electrical properties of solution-processed a-IGZO based transistors
a-IGZO,sputtering,evaporation,Al,contact resistance,PBS,NBS
Compound Semiconductor Materials, and Optoelectro- nic Devices > Compound Semiconductor Materials, Devices and Technologies
终稿
Jinxuan Wu / Shenzhen University
Sun Qijun / Guangdong University of Technology
Meng ZHANG / Shenzhen University
Yan Yan / Shenzhen University
Juin J. Liou / Zhengzhou University
As metal oxide thin film transistors (TFTs) are widely used in sensing, memory and display. How to improve the performance of TFTs has become a research hotspot. In the TFTs, the matching between the source/drain electrodes and semiconductor materials can affect the carrier transport, and then determine the device performance. Here, we study the effects of different electrode fabrication technologies (thermal evaporation and sputtering) on the TFTs performance. The contact resistance, channel resistance and electrical stability are compared and analyzed. The TFTs based on sputtering show lower contact resistance, lower channel resistance, higher mobility and better stability.

 
重要日期

  • 会议日期

    07月10日

    2021

    至

    07月12日

    2021

  • 05月10日 2021

    初稿截稿日期

  • 07月06日 2021

    注册截止日期

主办单位
长沙理工大学
协办单位
IEEE Electron Devices Society
IEEE
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