摘要详情
  1. 活动首页
  2. 摘要清单
  3. 摘要详情
139 / 2021-04-15 20:54:34
The Impact of Temperature on Reconfigurable Field-Effect Transistor and Its Applications
Reconfigurable Field-Effect Transistor,Tunnel Field-Effect Transistor,Temperature characteristic,XNOR operation
Microelectronic Devices and Materials > Nano-Electronic and Nano-Photonic Devices
终稿
Wangze Ni / Hunan University
Yichi Zhang / Hunan University
Bairun Huang / Hunan University
Zhuojun Chen / Hunan University
Reconfigurable field-effect transistor (RFET) has attracted great attention which can offer both n- and p- type devices. In this work, temperature characteristic of the RFET is investigated comprehensively, in comparison with tunnel field-effect transistor (TFET). By means of TCAD simulations, the RFET shows a lower subthreshold swing and higher Ion/Ioff ratio over a wide temperature range. To further explore the applications of the RFET, an XNOR operation is obtained through a single RFET. Finally, the impact of temperature on the XNOR is also studied and discussed.

 
重要日期

  • 会议日期

    07月10日

    2021

    至

    07月12日

    2021

  • 05月10日 2021

    初稿截稿日期

  • 07月06日 2021

    注册截止日期

主办单位
长沙理工大学
协办单位
IEEE Electron Devices Society
IEEE
联系方式
登录查看完整联系方式
历届会议
移动端
在手机上打开
小程序
打开微信小程序
客服
扫码或点此咨询