Zhihe Xia / Hong Kong University of Science and Technology
Letong Qian / Shenzhen University
Yan Yan / Shenzhen University
Man Wong / Hong Kong University of Science and Technology
Juin J. Liou / Shenzhen University
Hoi-Sing Kwok / Hong Kong University of Science and Technology
In this work, the low-frequency (f) noise in polycrystalline silicon thin-film transistors (TFTs) under the environmental temperature of 300 K and 373 K is characterized and analyzed. The behaviors of the low-f noise obey the classical 1/f theory. The carrier number fluctuation model is found to be the dominant mechanism. The density of defect states inside the devices increases from 2.66 × 1016 cm–3eV–1 to 6.66 × 1017 cm–3eV–1 when the substrate temperature increases from 300 K to 373 K. Violent lattice vibration at high temperature may be responsible for degenerated device mobility and increased low-f noise.