摘要详情
  1. 活动首页
  2. 摘要清单
  3. 摘要详情
133 / 2021-04-14 16:50:55
Design and analysis of XOR logic gate based on Photoelectric Memristor
memristor, photoelectric effect, XOR logic gate, Multisim
Integrated Circuits and Systems > Design Verification
全文录用
Lingyue Xue / Hunan Normal University
Jin Xiangliang / Hunan Normal University
Memristor is the fourth passive device, that has the advantages of high speed, low power consumption, convenient integration, simple structure, and compatibility with CMOS technology. However, the current implementation of memristors is based on new materials. Although the process is compatible, the fabrication process is complicated and the materials are expensive. It is difficult to realize the large-scale commercial application of memristors. The photoelectric memristor model, proposed by our research group, is well compatible with CMOS technology, and it can be used in digital circuits to achieve faster-switching speed and higher integration density. Therefore a special XOR gate was designed and simulated by Multisim software. The model can be used as an XOR gate from its output waveform characteristics. The XOR gate enables the coexistence of computational and memory circuits, and reduce area and circuit power consumption. Also, it will have broad application prospects in logic operation, brain neural network, computer processing and the like.
重要日期

  • 会议日期

    07月10日

    2021

    至

    07月12日

    2021

  • 05月10日 2021

    初稿截稿日期

  • 07月06日 2021

    注册截止日期

主办单位
长沙理工大学
协办单位
IEEE Electron Devices Society
IEEE
联系方式
登录查看完整联系方式
历届会议
移动端
在手机上打开
小程序
打开微信小程序
客服
扫码或点此咨询