InxAl1–xN is beneficial for developing full-spectrum devices due to its wide direct bandgap tunable from the near infrared to deep ultraviolet. However, the growth of InxAl1-xN suffers from the difficulty of phase separation due to large immiscibility and difference of thermal stability between InN and AlN. Here the Influence of growth parameters such as N2/Ar mixture, sputtering pressure and growth time on InxAl1-xN epitaxial layers is investigated and optimized. We further fabricated the In0.6Al0.4N photoelectric device, which is revealed consider-able photoelectric effect behavior. Our work is meaningful for InxAl1-xN film layer improvement and application in the future.