A V-shaped electron blocking layer was proposed to reduce the electron leakage of the deep ultraviolet laser diode in the active region. Three different electron barrier layer structures, rectangular, V-shaped, and inverted V-shaped, were simulated. The electron and hole concentration, radiation recombination rate, P-I and V-I characteristics of the three structural devices were compared, and it was concluded that the V-shaped electron barrier layer can inhibit electron leakage more effectively, thereby improving the optical and electrical properties of the device.