Hung-Chih Chin / Peking University Shenzhen Graduate School;Semiconductor Manufacturing International Corporation
Luodan Hu / Peking University Shenzhen Graduate School
Kuanchang Chang / Peking University Shenzhen Graduate School
Xinnan Lin / Peking University Shenzhen Graduate School
A low temperature supercritical fluid (SCCF) technology was employed to repair the dangling bonds existed in the amorphous-silicon thin-film transistors (a-Si TFTs) fabricated on the flexible polyimide substrate. The electrical characteristics of manufactured a-Si TFTs gained improvements in the on-state current, threshold voltage, subthreshold swing as well as mobility after the SCCF treatment. The inner mechanisms accounting for those optimizations were verified by the material analysis with reduced dangling bonds. Furthermore, a reaction model was proposed to describe the defects removal process in the a-Si flexible TFTs due to SCCF technology.