Shengji Wang / University of Electronic Science and Technology of China
Yihao Li / Tsinghua University
Yuanzhe Yao / University of Electronic Science and Technology of China
In high power Light-Emitting Diode (LED) illumination, alternating current input and LED-compatible monolithic integration of the current regulator driver are demanded. In this work, we firstly report a novel GaN bi-directional current regulator by implementing the self-quantum channel modulation. This modulation is realized by the dynamic expanded space charge region in the p-type GaN layer, which squeezes the current channel resulting in a stable current. The proposed regulator shows a prospective future in high power LED illumination applications.