859 / 2019-09-26 15:14:54

Effects of Helium on the creep resistance of Er2O3 films

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The nanostructured Er2O3 thin films implanted by Helium (He) were prepared by magnetron sputtering under different He partial pressure. The creep properties of the Er2O3 films under different temperature ranged from ambient temperature to 450℃ were investigated systematically by nanoindentation measurements. The morphology and microstructure of the films were determined by a scanning electron microscope (SEM) and an X-ray diffractometer (XRD), respectively. The effects of He on the creep properties of the Er2O3 film was discussed by using a slope of the creep rate stress curve at steady-state creep stage. The results show that the crystallinity of the films became weak with the He partial pressure. Furthermore, the implanting He has a strong impact on the creep resistance of the Er2O3 thin films.