Recently, ultrathin Bi2O2Se has been synthesized, and it possesses ultrahigh mobility. In addition, moderate bandgap (0.8 eV) together with its stability in the ambient environmentand easy accessibility, make Bi2O2Se a promising semiconductor candidate for future ultrafast high-performance and low-power electronic devices. Herein, we present the combined experimental and theoretical investigations the compression behaviors of Bi2O2Se under high pressure. HP-XRD measurement show that the tetragonal structure of Bi2O2Se presents a remarkable high stability with no phase transition up to 50 GPa. However, HP-RS measurement show that Alg and B1g modes splitting at 53 and 32 GPa, respectively. In addition,We have performed electrical resistivity and photocurrent measurements of Bi2O2Se under high pressure.