摘要详情

ID / 提交时间

135 / 2019-01-24 21:11:28

标题

Indium tin oxide thin films prepared by dc magnetron sputtering for transparent heating

关键字

ITO, Dc sputter, Transparent, Conducting

主题及专题

全体主题 > Advanced Instrumentation Based on Micro and Nanotechnologies

状态

摘要录用

作者

Jianhua Li / National Institute of Metrology

Xueshen Wang / National Institute of Metrology

Pingwei Lin / National Institute of Metrology

XInhua Chen / Beijing University of Civil Engineering and Architecture

Longfa Zhang / Beijing University of Civil Engineering and Architecture

Shuo Liu / Beijing University of Civil Engineering and Architecture

摘要

This paper reported a research on conducting tin-doped indium oxide (ITO) films fabricated by dc magnetron sputtering for transparent heating. ITO films with a thickness of 130 nm were deposited on BF33 glass substrates, followed by an annealing process in N2 atmosphere for 2 h at 450 ℃. The crystal structure, surface morphology, optical and electrical properties of ITO films were characterized. The predominant crystal face orientation was (222). The transmittance from 400 nm to 800 nm was 92.5%. Results showed that the sheet resistance and resistivity increased but the temperature coefficient of resistance (TCR) decreased with the larger oxygen flow. A low TCR and proper resistivity were the key factors for the application of conducting transparent heating.