622 / 2019-03-15 23:42:45

A Review of Radiation Effects in Double-SOI Technologies

radiation effects,total ionizing dose,single event effect,double-SOI,back gate bias,coupling effect

全体主题 > Device and Circuit Reliability

Abstract—In recent years, a new structure named double silicon-on-insulator (DSOI) was developed for radiation-hardened applications. This new structure exhibits potential benefits of reducing the radiation-induced degradation, thanks to the additional SOI2 electrode, which can be used to control the internal electrical field effectively and independently. In this paper, the authors review the total ionizing dose (TID) and single event upset (SEU) effects of DSOI devices. By applying a negative SOI2 bias, much higher radiation tolerance can be achieved for DSOI devices. In addition, the SOI2 layer is also effective to suppress the back-gate effect and cross-talk between the top silicon layer and the substrate. Therefore, the DSOI structure is a good candidate for high-radiation and X-ray imaging applications.