1 / 2018-01-25 05:31:50

Effect of Underlap with Fixed Gate Length:GaN-Based Double Gate MOSFETs

GaN,DG-MOSFETs,drain-induced barrier lowering (DIBL),high performance (HP),on-state current (ION),sub threshold slope (SS),switching characteristics

The performance of GaN-based double gate MOSFET of gate length 8 nm with underlap effect has been designed for VLSI Technology. The evaluation process was followed by non-equilibrium Green’s function formalism using SILVACO ATLAS followed to the international technology roadmap for Semiconductor (ITRS) – 2013. The investigations on the threshold voltage, Sub threshold Slope, ION, IOFF, ION/IOFF, DIBL and switching characteristics of the electric field have been done with the simulation results. In the simulation, adopting symmetrical distances from source to gate (S-G) and gate to drain (G-D) by fixing the gate length identical are cited as underlap. Here, the observation has been done for LUN= (0 to 4 nm) underlap length. GaN and HfO2 have chosen as channel material and dielectric material respectively. Proposed devices structure indicates that GaN-based DG-MOSFETs for LG=8 nm with various underlap lengths is a promising candidate for the aspect of modern VLSI applications.