MODELLING, SIMULATION AND CHARACTERISATION OF DEVICES AND CIRCUITS

• Physics Based Device Modelling and Simulation: Physical device and structure modelling including but not limited to active and passive, linear and non-linear simulation, characterisation, parameter extraction and model validation techniques

• TCAD Device Modelling and Simulation: Circuit and statistics-based modelling including but not limited to simulation, modelling, and design optimisation, surrogate modelling and model-order reduction techniques

• Small Signal, Large Signal and Noise Modelling: Empirical and behavioral device and structure modelling including but not limited to active and passive, linear and nonlinear characterisation, parameter extraction and model validation techniques

• Linear and Nonlinear Characterisation Techniques: Theoretically supported and experimentally demonstrated measurement techniques for devices and materials including but not limited to linear and nonlinear, time and frequency domain characterisation, error correction, de-embedding and calibration

• Linear and Nonlinear CAD Techniques for Devices and Circuits: Computer-aided design including but not limited to design automation, finite-difference, finite-element, integral equation, hybrid and other simulation methods for RF, microwave and terahertz devices and circuits, distortion, stability and qualitative dynamics analysis

• Multi-Physics Device and IC Modelling and Simulation (Thermal, EM, Transport): Simulation, modelling, and design optimisation techniques for devices and integrated circuits including but not limited to EM-, thermal, transport and multi-physics-based analysis

TECHNOLOGIES, DEVICES AND IC-PROCESSES

• Nanomaterials, Technologies and Devices for Microwave and Terahertz Applications: New and emerging material and device concepts including but not limited to carbon nanotubes, nanowires, nanoparticles, other nano-object based devices and systems, 1D-2D material based electronics, metamaterials, graphene, diamond, organic carbon based devices

• Device and IC Manufacturing: Reliability, Processes and Testing: MMIC technologies and processes including but not limited to manufacturing, reliability, failure analysis, testing, yield and cost

• Passive Devices, Hetero-Integration and 3D-Interconnects in ICs: Wafer-level integration techniques and More-than-Moore IC technologies including but not limited to III-V on Si and microwave MEMS integration, substrate-integrated and Si micro-machined waveguides and components, 3D-interconnects, wafer-level stacking and bonding, interconnec

• Si-Based Microwave Devices: Monolithic integrated electronic devices based on Si-based semiconductor technologies including but not limited to RF, microwave, and millimetre-wave active and passive devices in Si (C)MOS, SiGe BiCMOS and others

• GaN and Other Wide-Bandgap Semiconductor Devices: Monolithic integrated electronic devices based on wide-bandgap-based semiconductors including but not limited to RF, microwave, and millimetre-wave active and passive devices in GaN, SiC, diamond and others.

• III-V Compound Semiconductor Devices: Monolithic integrated electronic devices based on III-V compound semiconductor technologies including but not limited to RF, microwave, and millimetre-wave active and passive devices in GaAs, InP and other compound semiconductors

• Devices for Terahertz Electronics and Integrated Microwave Photonics: Novel electronic, photonic and opto-electronic devices for millimetre-wave and Terahertz operation including but not limited to tunnel-FETs, resonant tunneling diodes, uni-traveling carrier photo diodes, mixers and other nonlinear photonic devices, and Silicon Photonics

CIRCUIT DESIGN AND APPLICATIONS

• RF and Microwave Integrated Circuits: Linear and non-linear MMICs with upper cutoff frequencies up to 30 GHz including but not limited to signal amplification, generation, modulation, frequency conversion, phase and amplitude control

• Millimetre-Wave and Sub-Millimetre-Wave Integrated Circuits: Linear and non-linear MMICs with upper cutoff frequencies beyond 30 GHz including but not limited to signal amplification, generation, modulation, frequency conversion, phase and amplitude control

• Mixed-Signal and High-Speed Digital ICs: Mixed-signal circuits including but not limited to high-speed ADC, DAC and DDS for transmission and electrical/optical interfaces, backplanes, MIMO, SDR and cognitive system-on-chip, considering signal integrity, equalisation and other performance

• Ultra Low-Power ICs: Low power consumption microwave and millimetre-wave integrated circuits including but not limited to signal amplification, generation, modulation, frequency conversion, phase and amplitude control; wake-up transceivers; antimonide and other low power semiconductor-ba

• Power Amplifier ICs: Solid-state power amplifiers for RF, microwave, and millimetre-wave signals including but not limited to wide-bandgap, compound semiconductor and silicon-based microwave power amplifiers; switch-mode amplifiers

• Power Amplifiers and Smart Transmitters: Efficiency Enhancement, Linearisation, Hybrid Integration: Cartesian and polar power amplifier design, behavioral modelling, continuous and switch-mode operation, linearisation and predistortion techniques, efficiency enhancement, adaptive gain

• Tunable and Reconfigurable Circuits and Systems: Electronic, magnetic, mechanic, thermal tuning approaches, switches and switching devices, tunable, reconfi gurable or programmable devices, performance metrics and evaluation

• Integrated Detectors, Receivers, Transmitters and Transceivers: Monolithic integrated transceiver circuits including but not limited to homodyne, heterodyne, direct-detection, coherent and incoherent receivers, detectors and radiometers, transmitters and transceivers

• System-in-Package Technologies from RF to Terahertz and Photonics: Dielectric and substrate materials, LTCC, LCP and MCM technologies, component and subsystem packaging, assembly methods, 3D-printing, wafer stacking, 3D-interconnects